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DB3-DB3TG -- 150mW Bi-directional Trigger Diodes
September 2010
DB3-DB3TG 150mW Bi-directional Trigger Diodes
Features
* * * * * * * * * * VBO : 32V Version Low break-over current DO-35 package (JEDEC) Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and terminals are readily solderable RoHS compliant High reliability glass passivation insuring parameter stability and protection against junction contamination. Terminal: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed : 260C/10 seconds
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings and Electrical Characteristics
Symbol
VBO Break-over Voltage
Parameter
@ C=22nF Min. Typ. Max.
Value
DB3 28 32 36 3 100 5 10 5 150 2 400 -40 to +125 DB3TG 30 32 34 2 15 9
Units
V V V V A V A V mW A C/W C
VBO IBO V IB VO PD IFRM Rja TJ, TSTG
Break-over Voltage Symmetry Break-over Current Dynamic Break-over Voltage Leakage Current Output Voltage Power Dissipation
@ C=22nF Max. @ C=22nF Max. @ IBO to IF=10mA Min.
@ VB=0.5VBO(Max.) Max. *see diagram 1 Min.
Repetitive Peak Forward Current, Pulse Width=20sec Typical Thermal Resistance, Junction to Ambient (Note1) Junction and Storage Temperature Range
* Rating at 25C ambient temperature unless otherwise specified. * Notes: 1. Valid provided that electrodes are kept at ambient temperature
(c) 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev. A1 1
www.fairchildsemi.com
DB3-DB3TG -- 150mW Bi-directional Trigger Diodes
Typical Performance Characteristics
IF=10m
VBO IBO
IB VB=0.5*VBO
: Break-Over Voltage : Break-Over Current : Dynamic Breakover Voltage : Leakage Current at V B=0.5*VBO : Voltage at Current I F=10mA
IBO V IB VBO VF V VF
Diagram 1 : Test circuit
Figure 1. Admissible Power Dissipation Curve
160
Power Dissipation (mW)
120
80
40
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature ( oC)
Figure 2. Relative Variation of VBO versus Junction Temperature
1.08
Figure 3. Repetitive Peak Pulse Current versus Pulse Duration (maximum values)
Repetitive peak pulse current (A)
100
VBO [Tj] / VBO [Tj=25C]
1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 25 50 75 100 125
10
1
0.1 1 10 100
Tj(C)
tp ( s)
(c) 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev. A1 2
www.fairchildsemi.com
DB3-DB3TG -- 150mW Bi-directional Trigger Diodes
Physical Dimensions
DO-35
Dimensions in Millimeters
(c) 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev. A1 3
www.fairchildsemi.com
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Rev. I49
(c) Fairchild Semiconductor Corporation
www.fairchildsemi.com

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